Discerning of Hall Effect in Technology using New Data Acquisition Technique

Abstract

Certain areas of physics are revolutionized by modern technology, and the Hall Effect Apparatus (HEA) is one of those, as this apparatus has a lot of importance. To study the HE apparatus, an electronics-based system is designed through which one can be informed about the Hall Voltage (V_H), Hall Coefficient (R_H), and the type of majority charge carriers in semiconductor samples using microcontrollers with a built-in graphic user interface (GUI) as a stand-alone system. The purpose is to develop and upgrade the HE apparatus using advanced data acquisition techniques and introduce microcontrollers for a GUI to obtain electronic data and graphical representations. The measured results show that the system can produce 90% results at 10 times lower cost. Generally, three semiconductor samples were taken to observe the Hall Effect parameters using the HE Apparatus, and remarkable relative results with the literature were observed. Carrier concentration for CdHgTe, ZnO, and Silicon were -10×10²⁰/cm³, -2×10¹⁸/cm^3, and 7.5×10¹⁸/cm^3, respectively, using the I/V slope from the plots obtained at different magnetic fields. Similarly, the Hall coefficients, Hall Mobility, and the Resistivity.