Discerning of Hall Effect in Technology using New Data Acquisition Technique

Anum Zaidi; Amad Ud Din; Hammad Ul Husnain; Muhammad Sahil

doi:10.33897/fujeas.v5i1.744

Anum Zaidi Fatima Jinnah Women University, Rawalpindi, Pakistan
Amad Ud Din Fatima Jinnah Women University, Rawalpindi, Pakistan
Hammad Ul Husnain Air University, Islamabad, Pakistan
Muhammad Sahil Air University, Islamabad, Pakistan

DOI: https://doi.org/10.33897/fujeas.v5i1.744

Keywords: Semiconductor Material, Hall Effect, Hall Voltage, Hall Coefficient and Charge Carrier Concentration

Abstract

Certain areas of Physics are revolutionized by modern technology and the Hall Effect Apparatus (HEA) is one of those as this apparatus has a lot of importance. To study the HE apparatus, an electronics-based system is designed through which one can be informed about the Hall Voltage (V_H), Hall Coefficient (R_H), type of majority charge carriers in semiconductor samples using microcontrollers with built-in graphic user interface (GUI) as a stand-alone system. The purpose is to develop and upgrade the HE apparatus using advanced data acquisition techniques and introducing microcontrollers for GUI to obtain electronic data and graphical representations. The measured results show that the system can produce 90% results at 10-times lower cost. Generally, three semiconductor samples were taken to observe the Hall Effect parameters using HE Apparatus and remarkable relative results with Literature were observed. Carrier concentration for CdHgTe, ZnO and Silicon were -10×10²⁰/cm³, -2×10¹⁸/cm³ and 7.5×10¹⁸/cm³respectively using the I/V slope from the plots obtained at different Magnetic fields. Similarly, the Hall coefficients, Hall Mobility and the Resistivity.